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1SS413
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
for high speed switching application
PINNING PIN 1 2 DESCRIPTION Cathode Anode
2
1
Q
Top View Marking Code: "Q" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature
Symbol VRM VR IFM IO IFSM Ptot TJ Ts
Value 25 20 100 50 1 100 125 - 55 to + 125
Unit V V mA mA A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 20 V Total Capacitance at VR = 0 V, f = 1 MHz Symbol VF IR CT Typ. 3.9 Max. 0.55 0.5 Unit V A pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 23/11/2006
1SS413
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-523
ALL ROUND
A C
HE
D
A
E
bp
UNIT
mm
A
0.70 0.60
bp
0.4 0.3
C
0.135 0.127
D
1.25 1.15
E
0.85 0.75
HE
1.7 1.5
V
0.1
5
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 23/11/2006

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